MJE15035 |
RFQ for MJE15035 Required Field |
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| Technical/Catalog Information | MJE15035 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 350V |
| Current - Collector (Ic) (Max) | 4A |
| Power - Max | 50W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Frequency - Transition | 30MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJE15035 MJE15035 MJE15035OS ND MJE15035OSND MJE15035OS |
| Product | Manufacturers | Pack | D/C |
| MJE15035 | - | 4A350V50W | TO-220 |
| Rating | Symbol | MJE15034 MJE15035 |
Unit |
| Collector−Emitter Voltage | VCEO | 350 | Vdc |
| Collector−Base Voltage | VCB | 350 | Vdc |
| Emitter−Base Voltage | VEB | 5.0 | Vdc |
| Collector Current − Continuous − Peak |
IC | 4.0 8.0 |
Adc |
| Base Current | IB | 1.0 | Adc |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD | 50 0.40 |
Watts W/°C |
| Total Power Dissipation @ TA = 25°C Derate above 25°C |
PD | 2.0 0.016 |
Watts W/°C |
| Operating and Storage Junction Temperature Range |
TJ, Tstg | 65 to +150 |
°C |
